Source-drain distance scaling and its effect on fringing capacitance in ultra-high speed GaN HEMTs
نویسندگان
چکیده
Source-drain distance scaling and its effect on fringing capacitance in ultra-high speed GaN HEMTs Bo Song, Berardi Sensale-Rodriguez, Ronghua Wang, Andrew Ketterson, Michael Schuette, Edward Beam, Paul Saunier, Xiang Gao , ShipingGuo , Patrick Fay, Debdeep Jena, and Huili Grace Xing Department of Electrical Engineering, University of Notre Dame, USA, *[email protected], Triquint Semiconductor, USA, IQE RF LLC, USA
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